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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW86 HF/VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW86
QUICK REFERENCE DATA R.F. performance up to Th = 25 C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) s.s.b. (class-A) VCE V 28 28 26 f MHz 175 1,6 - 28 1,6 - 28 PL W 45 5-47,5 (P.E.P.) 17 (P.E.P.) > Gp dB 7,5 > - typ. 19 typ. 22 % 70 typ. 45 zi - - YL mS - - d3 dB - typ. -30 typ. -42
0,7 + j1,3 110 - j62
PIN CONFIGURATION
halfpage
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open-collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW86
65 V 36 V 4V 4A 12 A 105 W 200 C
-65 to + 150 C
handbook, halfpage
10
MGP630
handbook, halfpage
150
MGP631
IC (A)
Prf (W) 100
derate by 0.58 W/K 0.43 W/K
Th = 70 C
Tmb = 25 C
50
1 10
VCE (V)
102
0 0 50 Th (C) 100
I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; VCE 28 V; f > 1 MHz.
THERMAL RESISTANCE (dissipation = 45 W; Tmb = 83,5 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 2,65 K/W 1,95 K/W 0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 25 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 36 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE typ. 45 10 to 80 < typ. typ. typ. typ. typ. typ. 1,2 IC = 2,5 A; VCE = 5 V D.C. current gain ratio of matched devices(1) IC = 2,5 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 7,5 A; IB = 1,5 A Transition frequency at f = 100 -IE = 2,5 A; VCB = 28 V -IE = 7,5 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 28 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02.
handbook, halfpage
BLW86
V(BR)CES V(BR)CEO V(BR)EBO ICES ESBO ESBR
> > > < > >
65 V 36 V 4V 10 mA 8 mJ 8 mJ
hFE1/hFE2 VCEsat MHz(1) fT fT Cc Cre Ccf
1,5 V 570 MHz 570 MHz 82 pF 54 pF 2 pF
4
MGP632
IC (A)
2
Th = 70 C
25 C
Fig.4
Typical values; VCE = 28 V.
0 0.5
1
VBE (V)
1.5
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
MGP633
handbook, halfpage
100
handbook, halfpage
300
MGP634
Cc (pF) hFE VCE = 28 V 200
50 5V
100
typ
0 0 5 10 IC (A) 15
0 0 20 VCB (V) 40
Fig.5 Typical values; Tj = 25 C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
1000
MGP635
fT (MHz)
VCB = 28 V 500 15 V
0 0 5 10 -IE (A) 15
Fig.7 Typical values; f = 100 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
HF/VHF power transistor
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 C f (MHz) 175 VCE (V) 28 PL (W) 45 PS (W) <8 GP (dB) > 7,5 IC (A) < 2,47 (%) > 70 zi () 0,7 + j1,3
BLW86
YL (mS) 110 - j62
handbook, full pagewidth
C1 50
L1 C2
,, ,, ,,
C3a L5 L4 T.U.T. L2 C3b L6 C4 C5 L3 L8 +VCC
C6a C7 50 C8
L7
C6b
R2
R1
MGP604
Fig.8 Test circuit; c.w. class-B.
List of components: C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) C3a = C3b = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor C5 = 100 nF polyester capacitor C6a = 2,2 pF ceramic capacitor (500 V) C6b = 1,8 pF ceramic capacitor (500 V) C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) L1 = 14 nH; 1 turn Cu wire (1,6 mm); int. dia. 7,7 mm; leads 2 x 5 mm L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 x 5 mm L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm x 6 mm); taps for C3a and C3b at 5 mm from transistor L6 = 80 nH; 3 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 8,0 mm; leads 2 x 5 mm L7 = 62 nH; 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 8,1 mm; leads 2 x 5 mm L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/6". R1 = R2 = 10 carbon resistor Component layout and printed-circuit board for 175 MHz test circuit see Fig.9.
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
handbook, full pagewidth
150
72
1888MJK
L3 C4 R1 L2 C1 C2 L1 L4 L7 C3b C3a L5 L6
L8 +VCC C5 R2
C6a C7 C8 C6b
1888MJK
rivet
MGP605
Fig.9 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. To minimize the dielectric losses, the ground plane under the interconnection of L7 and C7 has been removed.
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
handbook, halfpage
75
MGP636
MGP637
handbook, halfpage
10
100
PL (W) 50
Th = 25 C
70 C
Gp (dB)
Gp
(%)
5
50
25
0 0 10 PS (W) 20
0 0 25 50 PL (W)
0 75
Fig.10 Typical values; VCE = 28 V; f = 175 MHz.
Fig.11 Typical values; VCE = 28 V; f = 175 MHz; - - - Th = 25 C; Th = 70 C.
handbook, halfpage
100
MGP638
PLnom (W) (VSWR = 1) Th = 50 C 70 C 90 C
50
0 1 10 VSWR
102
The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter.
Fig.12 R.F. SOAR; c.w. class-B operation; f = 175 MHz; VCE = 28 V; Rth mb-h = 0,3 K/W
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
handbook, halfpage
2.5
MGP639
handbook, halfpage
10
MGP640
RL
RL CL
0
xi ri, xi () ri ri CL RL ()
CL (pF)
0 xi
5
-250
-2.5
0 0 100 200 f (MHz) 300 0 100 200 f (MHz)
-500 300
Typical values; VCE = 28 V; PL = 45 W; Th = 25 C.
Typical values; VCE = 28 V; PL = 45 W; Th = 25 C.
Fig.13 Input impedance (series components).
Fig.14 Load impedance (parallel components).
OPERATING NOTE Below 75 MHz a base-emitter resistor of 10 is recommended to avoid oscillation. This resistor must be effective for r.f. only.
handbook, halfpage
25 Gp
MGP641
(dB) 20
15
10
5
0 0 100 200 f (MHz) 300
Typical values; VCE = 28 V; PL = 45 W; Th = 25 C.
Fig.15 Power gain versus frequency.
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
R.F. performance in s.s.b. class-AB operation (linear power amplifier) VCE = 28 V; f1 = 28,000; f2 = 28,001 MHz. OUTPUT POWER W 5 to 47,5 (P.E.P.) 5 to 42,5 (P.E.P.) Note GP dB typ. 19 typ. 19 dt (%) at 47,5 W typ. 45 - IC (A) (P.E.P.) typ. 1,9 - d3 dB(1) typ. -30 typ. -30 d5 dB(1) < -30 < -30 IC(ZS) mA 50 50
BLW86
Th C 25 70
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
L4 C1 50 L1 C2 R2 temperature compensated bias C3 C5 L2 R1 T.U.T. L3 C4
C7 50 C8
+VCC C6
MGP642
Fig.16 Test circuit; s.s.b. class-AB.
List of components: C1 = C2 = 10 to 780 pF film dielectric trimmer C3 = C5 = C6 = 220 nF polyester capacitor C4 = 56 pF ceramic capacitor (500 V) C7 = C8 = 15 to 575 pF film dielectric trimmer L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2 x 5 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2 x 5 mm L4 = 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2 x 5 mm R1 =1,2 ; parallel connection of 4 x 4,7 carbon resistors R2 = 39 carbon resistor
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
handbook, halfpage
-20
MGP643
handbook, halfpage
50
MGP644
20 Gp (dB) 15
d3, d5 (dB) -30 d3
dt 90 C 70 C 50 C 25 C Th = (%) 40
Gp
dt 30 10
-40
d5 20 5
-50
10 0 25 P.E.P. (W) 50 0 25 50 P.E.P. (W)
0 75
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; typical values.
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; typical values.
Fig.17 Intermodulation distortion as a function of output power.(1)
Fig.18 Double-tone efficiency and power gain as a function of output power.
handbook, halfpage
30
MGP645
handbook, halfpage
20
MGP646
Gp (dB) 20
ri, xi () 10
ri 10 0 xi
0 1 10 f (MHz)
102
-10
1
10
f (MHz)
102
VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W; Th = 25 C; ZL = 6,4 .
VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W; Th = 25 C; ZL = 6,4 .
Fig.19 Power gain as a function of frequency.
Fig.20 Input impedance (series components) as a function of frequency.
Figs 19 and 20 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. August 1986 11
Philips Semiconductors
Product specification
HF/VHF power transistor
Ruggedness in s.s.b. operation
BLW86
The BLW86 is capable of withstanding a load mismatch (VSWR = 50) under the following conditions: class-AB operation; f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Th = 70 C and PLnom = 50 W P.E.P. R.F. performance in s.s.b. class-A operation (linear power amplifier) VCE = 26 V; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER W 17 (P.E.P.) 17 (P.E.P.) Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. GP dB typ. 22 typ. 22 IC A 1,7 1,7 d3 dB(1) typ. -40 typ. -42 d5 dB(1) < -40 < -40 Th C 70 25
handbook, full pagewidth
L5 C1 50 C2 L1 R3 T.U.T. C5 R4 L3 C7 C6 R7 C3 L2 R5 C4 R8 R9 BY206 C8 L4
C10 50 C11
+VCC
BD204 R6 R1 R2
C9
MGP647
Fig.21 Test circuit; s.s.b. class-A.
August 1986
12
Philips Semiconductors
Product specification
HF/VHF power transistor
List of components in Fig.21: C1 = C2 = 10 to 780 pF film dielectric trimmer C3 = 22 nF ceramic capacitor (63 V) C4 = 47 F/10 V electrolytic capacitor C5 = 56 pF ceramic capacitor (500 V) C6 = 47 F/35 V electrolytic capacitor C7 = C8 = 220 nF polyester capacitor C9 = 10 F/35 V electrolytic capacitor C10 = 10 to 210 pF film dielectric trimmer C11 = 15 to 575 pF film dielectric trimmer L1 = 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 x 5 mm L2 = L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm L5 = 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm R1 = 600 ; parallel connection of 2 x 1,2 k carbon resistors (5%; 0,5 W each) R2 = 15 carbon resistor (5%; 0,25 W) R3 = 1,2 ; parallel connection of 4 x 4,7 carbon resistors (5%; 0,125 W each) R4 = 33 carbon resistor (5%; 0,25 W) R5 = 18 carbon resistor (5%; 0,25 W) R6 = 120 wirewound resistor (5%; 5,5 W) R7 = 1 carbon resistor (5%; 0,125 W) R8 = 47 wirewound potentiometer (3 W) R9 = 1,57 ; parallel connection of 3 x 4,7 wirewound resistors (5%; 5,5 W each)
BLW86
handbook, halfpage
-20
MGP648
d3 (dB) -30 IC = 1.4 A 1.55 A 1.7 A
-40
-50
-60
0
10
20
P.E.P. (W)
30
Fig.22 Intermodulation distortion as a function of output power. Typical values; VCE = 26 V; Th = 70 C; f1 = 28,000 MHz; f2 = 28,001 MHz.
August 1986
13
Philips Semiconductors
Product specification
HF/VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLW86
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
14
Philips Semiconductors
Product specification
HF/VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW86
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
15

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